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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907U/2907AU.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222U KTN2222AU
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
VCBO VCEO VEBO
IC
PC
Tj
60 75 30 40 56
600
100
150
V V V mA
mW
Storage Temperature Range
Tstg
-55 150
KTN2222U/AU
EPITAXIAL PLANAR NPN TRANSISTOR
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.06
J 1.30
K 0.