MJD112 - EPITAXIAL PLANAR NPN TRANSISTOR

KEC

Key Features

High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.

MJD112 epitaxial planar npn transistor by KEC - Datasheet Preview

Datasheet Details

Part number	MJD112
Manufacturer	KEC
File Size	391.48 KB
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet	MJD112 Datasheet

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Other Datasheets by KEC

Part Number	Description
MJD112L	EPITAXIAL PLANAR NPN TRANSISTOR
MJD117	EPITAXIAL PLANAR PNP TRANSISTOR
MJD117L	EPITAXIAL PLANAR PNP TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.3 20 150 -55 150 UNIT V V V A mA W C B Q A C H FF 123 1. BASE 2. COLLECTOR 3.