MJD112
MJD112 is EPITAXIAL PLANAR NPN TRANSISTOR manufactured by KEC.
FEATURES
High DC Current Gain. : h FE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) plementary to MJD117/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO
Tj Tstg
RATING 100 100 5 2 4 50 1.3 20 150
-55 150
UNIT V V V
A m A
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.1
1.00 MAX 2.30+_ 0.2 0.5+_ 0.1 2.00 +_0.20 0.50+_ 0.10 0.91+_ 0.10 0.90+_ 0.1 1.00+_ 0.10
0.95 MAX
DPAK
FF...
