Datasheet Summary
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies.
KHB019N20P1/F1
N CHANNEL MOS FIELD EFFECT TRANSISTOR
Features
VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V
K M L J D N N
DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2...