Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack.
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N-Ch Trench MOSFET
Features
VDSS=30V, ID=17A. Drain to Source On Resistance. RDS(ON)=5.6m (Max.) @ VGS=10V RDS(ON)=9.7m (Max.) @ VGS=4.5V
8 5 B1 B2 1 4 A
MOSFET Maximum Ratings (Ta=25
CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Drain Power Dissipation DC@Ta=25 Pulsed @Ta=25
Unless otherwise noted)
SYMBOL RATING VDSS VGSS (Note 1) ID IDP (Note 1) PD Tj...