Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack..
Features
VDSS=30V, ID=16A. Drain to Source On Resistance.
RDS(ON)=6.3m (Max.) @ VGS=10V RDS(ON)=10.7m (Max.) @ VGS=4.5V
MOSFET Maximum Ratings (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DC@Ta=25 Pulsed
Drain Power Dissipation @Ta=25
Maximum Junction Temperature
Storage Temperature Range
(Note 1) (Note 1)
VDSS VGSS
ID IDP PD Tj Tstg
30...