Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter.
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N-Ch Trench MOSFET
Features
¡⁄ ¡⁄ VDSS=30V, ID=68A. Low Drain to Source On-state Resistance. : RDS(ON)=6.8m (Max.) @ VGS=10V : RDS(ON)=13.2m (Max.) @ VGS=4.5V
1 2 3
DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N
1. GATE...