Datasheet4U Logo Datasheet4U.com

BCW60A - NPN General Purpose Transistors

Key Features

  • NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Storage temperature Symbol VCBO VCEO VEBO IC Pc Tstg Rating 32 32 5 100 350 150 Unit V V V mA mW +0.1 0.38-0.1 0-0.1 www. kexin. com. cn 1 SMD.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BCW60A NPN EPITAXIAL SILICON TRANSISTOR Samsung semiconductor
BCW60A NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) Siemens Semiconductor Group
BCW60A NPN Silicon AF Transistors Infineon Technologies AG
BCW60A GENERAL PURPOSE TRANSISTOR Motorola
BCW60A Small Signal Transistors Vishay

Other Datasheets by Kexin Semiconductor

Part Number Description
BCW60B NPN General Purpose Transistors
BCW60C NPN General Purpose Transistors
BCW60D NPN General Purpose Transistors
BCW61 PNP Transistors
BCW61A General Purpose Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type NPN General Purpose Transistors BCW60A/B/C/D Transistors IC SOT-23 Unit: mm Features NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Storage temperature Symbol VCBO VCEO VEBO IC Pc Tstg Rating 32 32 5 100 350 150 Unit V V V mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.