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KIA08TB70B - FAST RECOVERY DIODE

General Description

08TB70B This series are state of the

art devices designed for use in switching power supplies, inverters and as free wheeling diodes.

2.

Key Features

  • Ultrafast 25 nanosecond recovery time.
  • 175°C operating junction temperature.
  • Popular TO.
  • 220 package.
  • Epoxy meets UL 94 V.
  • 0 @ 0.125 in.
  • Low forward voltage.
  • Low leakage current.
  • High temperature glass passivated junction.
  • Reverse voltage to 650 V.
  • Pb.
  • free packages are available 3. Mechanical Characteristics.
  • Case: epoxy, molded.
  • Weight: 1.9 grams (approximately).
  • Finish: all external surfaces corrosion resistant.

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Datasheet Details

Part number KIA08TB70B
Manufacturer KIA
File Size 163.78 KB
Description FAST RECOVERY DIODE
Datasheet download datasheet KIA08TB70B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KIAULTRAFAST FAST RECOVERY DIODE 8.0A，650V SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 08TB70B This series are state−of−the−art devices designed for use in switching power supplies, inverters and as free wheeling diodes. 2. Features  Ultrafast 25 nanosecond recovery time  175°C operating junction temperature  Popular TO−220 package  Epoxy meets UL 94 V−0 @ 0.125 in  Low forward voltage  Low leakage current  High temperature glass passivated junction  Reverse voltage to 650 V  Pb−free packages are available 3. Mechanical Characteristics  Case: epoxy, molded  Weight: 1.9 grams (approximately)  Finish: all external surfaces corrosion resistant and terminal  Leads are readily solderable  Lead temperature for soldering purposes: 260°C max for 10 seconds 4.