KIA13N50H Description
The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology.
KIA13N50H Key Features
- RDS(on)=0.48Ω @ VGS=10V
- Low gate charge ( typical 43nC)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability