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KIA28N50H - N-CHANNEL MOSFET

General Description

This Power MOSFET is produced using KIA advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • RDS(on)=0.17Ω @ VGS=10V.
  • Low gate charge ( typical 102nC).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.0 JAN 2014 KIA.

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Datasheet Details

Part number KIA28N50H
Manufacturer KIA
File Size 489.59 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet KIA28N50H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KIA 28A，500V N-CHANNEL MOSFET SEMICONDUCTORS 15507595280 QQ 2880195519 1.Description 28N50H This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. . 2. Features  RDS(on)=0.17Ω @ VGS=10V  Low gate charge ( typical 102nC)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability 3. Pin configuration Pin 1 2 3 1 of 5 Function Gate Drain Source Rev 1.