Datasheet Summary
SEMICONDUCTORS
2.0A, 600V N-CHANNEL MOSFET
2N60H
1.Description
The KIA2N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
2. Features
- RDS(ON)=4.1Ω@VGS=10V.
- Low gate charge (typical 9nC)
- High ruggedness
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability
3. Pin configuration
Pin 1 2 3 4
1 of 6
Function Gate Drain
Source Drain
Rev 1.1 JAN 2014
SEMICONDUCTORS
2.0A, 600V N-CHANNEL MOSFET
2N60H
4....