DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. 2. FEATURES
65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% avalanche tested Improved dv/dt capability 175º maximum junction temperature rating 3. Pin configuration Pin 1 2 3 4 Function Gate Drain Source Drain 1 of 7 Datasheet pdf - KIA SEMICONDUCTORS 60V N-CHANNEL MOSFET 65N06 4. Absolute maximum ratings Parameter Drain-source voltage Tc=25 ºC Drain current Tc=100 ºC Drain current pulsed (note 1) Gate-source voltage Single pulsed avalanche energy (note 2) Avalanche current (note 1) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Tc=25 ºC Power dissipation derate above 25 ºC Operating and Storage temperature range Maximum lead temperature for soldering purposes,1/8’’ from case for 5 seconds Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ...
KIA
