KIA65N06 Overview
These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC...
KIA65N06 Key Features
- 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% aval