SJMN078R60W Datasheet | Kodenshi AUK Group

Features - 600V Super-junction MOSFET - Low FOM RDS(on) - Qg - Low drain-source On-resistance: RDS(on)=78mΩ (Max.) - 100% avalanche tested - Ro HS pliant device Ordering Information Part Number Marking Package N078R60 TO-247 TO-247 Marking Information AUK △YMDD N078R60 Column 1: Manufacturer Column 2: Production Information e.g.) △YMDD -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) - Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range - Limited only maximum junction temperature VDSS VGSS Tc=25C ID Tc=100C IDM EAS IAR...