SNN01Z60Q Datasheet | Kodenshi AUK Group

SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures - Logic level l gate drive e - Max. RDS(ON a VGS = 10V V, ID = 0.5A N) = 135mΩ at - Low RDS(on) provides hi igher efficie ency - ESD protec cted: 1000V V (HBM ±500 0V) - Halogen fr ree and Ro H HS plian nt device Package SOT-223 Or rdering In nformatio on Part Num mber SNN01Z Z60Q Marking g SNN01Z6 60 SOT-223 arking Inf formation n Ma Column 1: 1 Device Cod de Column 2: 2 Production n Information e.g.) YW WW -. Y: Year Y Code -. WW W: Week Code e SNN0 01Z60 YWW bsolute maximum m ratings (T TC=25°C unles ss otherwise noted) n Ab Characteristic Drain-source voltage v G Gate-source v voltage Drain current (DC) - Drain current (Pulsed) - (Note 2) Symb bol VDS SS VGS SS ID Tc=25°C Tc=100°C IDM M EAS S IAR R EAR R PD TJ Tst tg Rati ing 60 0 ±2 20 1 0.6 63 4 35 5 1 0.1 18 1.8 15 50 -55~150 Unit V V A A A m J A m J W °C °C Si ingle pulsed avalanche energy e Re epetitive ava alanche curr rent (Note 1) Re epetitive ava alanche energy (Note 1) Po ower dissipa ation Ju unction temp perature St torage temp perature rang ge - Limited L only maximum m junc ction tempera ature v. date: 24-S SEP-12 Rev KS SD-T5A014-0 000 .auk.co o.kr 1 of o 8 Free Datasheet http://../ Thermal Characteristics Characteristic Thermal resistance, junction to ambient - When mounted on the minimum pad size remended (PCB). Symbol Rth(j-a) Rating Max. 69 Unit °C/W Electrical Characteristics (Tj=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise...