SNN5010D
SNN5010D is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- High Voltage : BVDSS=100V(Min.)
- Low Crss : Crss=130p F(Typ.)
- Low gate charge : Qg=75n C(Typ.)
- Low RDS(ON) : RDS(ON)=26mΩ(Max.)
Ordering Information
Type No. SNN5010D
Marking SNN5010
Package Code TO-252
PIN Connection
TO-252
Marking Diagram
SNN 5010 YWW
Column 1,2 : Device Code
Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage Drain current (DC)
- Drain current (Pulsed)
- VDSS
VGSS
(TC=25℃) (TC=100℃)
Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
② ② ① ①
PD IAS EAS IAR EAR TJ Tstg
- Limited by maximum junction temperature
Rating
100 ±20 50 31 150 65 25 173 50 6.5...