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2KK5002 - N-Channel Enhancement MOSFET

Features

  • ƽVDS=20V ƽRDS(on) mȍ@VGS=4.5V ,ID=3.6A ƽRDS(on) mȍ@VGS=2.5V ,ID=3.1A    627       3 1 2       G1 S2 3D         MOSFET 8QLW PP    .
  • DWH 6RXUFH 'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current.
  • 1 Ta=25ć Ta=70ć Pulsed Drain Current Power Dissipation Ta=25ć Ta=70ć.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement MOSFET 2KK5002 ƵFeatures ƽVDS=20V ƽRDS(on) mȍ@VGS=4.5V ,ID=3.6A ƽRDS(on) mȍ@VGS=2.5V ,ID=3.1A    627       3 1 2       G1 S2 3D         MOSFET 8QLW PP    *DWH 6RXUFH 'UDLQ     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 Ta=25ć Ta=70ć Pulsed Drain Current Power Dissipation Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 *2 Junction Temperature Storage Temperature Range Notes: *1.Surface Mounted on FR4 Board, t İ 5 sec. *2.Surface Mounted on FR4 Board. Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±8 2.8 2.2 10 1.
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