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2KK5005 - N-Channel Enhancement MOSFET

Features

  • VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) D    627       3 1 2            8QLW PP       G S     1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current.
  • Power Di.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type MOSFIECT N-Channel Enhancement MOSFET ..5 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) D    627       3 1 2            8QLW PP       G S     1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current * Power Dissipation TA=25 TA=70 Thermal Resistance.Junction- to-Ambient Thermal Resistance.
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