Kexin Electronics 2KK5004
N-Channel Enhancement MOSFET
FEATURES
ƽ VDS=20V ƽ RDS(on)= 85mȍ@VGS=4.5V ,ID=3.6A ƽ RDS(on)= 115mȍ@VGS=2.5V ,ID=3.1A G1 S2 627 3 3D 1 2 1.6 8QLW PP *DWH 6RXUFH 'UDLQ ƵABSOLUTE MAXIMUM RATINGS
Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Ta=25ć Continuous Drain Current TJ =150ć *1 Ta=70ć Pulsed Drain Current Power Dissipation Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 *2 Junction Temperature Storage Temperature Range Notes: *1.Surface Mounted on FR4 Board, t İ 5 sec. *2.Surface Mounted on FR4 Board. Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±8 2.8 2.2 10 1.25 0.8 100 166 150 -55 to 150 Unit V A W ć/W ć 1 SMD Type N-Channel Enhancement MOSFET .. MOSFET ƵELECTRICAL CHARACTERISTICS
Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drai...