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2KK5004 - N-Channel Enhancement MOSFET

Features

  • ƽ VDS=20V ƽ RDS(on)= 85mȍ@VGS=4.5V ,ID=3.6A ƽ RDS(on)= 115mȍ@VGS=2.5V ,ID=3.1A G1 S2 627       3    3D 1 2            1.6       8QLW PP    .
  • DWH 6RXUFH 'UDLQ Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Ta=25ć Continuous Drain Current TJ =150ć.
  • 1 Ta=70ć Pulsed Drain Current Power Dissipation Ta=25ć Ta=.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement MOSFET .. MOSFET Ƶ Features ƽ VDS=20V ƽ RDS(on)= 85mȍ@VGS=4.5V ,ID=3.6A ƽ RDS(on)= 115mȍ@VGS=2.5V ,ID=3.1A G1 S2 627       3    3D 1 2            1.6       8QLW PP    *DWH 6RXUFH 'UDLQ Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Ta=25ć Continuous Drain Current TJ =150ć *1 Ta=70ć Pulsed Drain Current Power Dissipation Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient *1 *2 Junction Temperature Storage Temperature Range Notes: *1.Surface Mounted on FR4 Board, t İ 5 sec. *2.Surface Mounted on FR4 Board.
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