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2KK5007DS - N-Channel Enhancement MOSFET

Features

  • VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) D G S    627       3 1 2        1.6       8QLW PP    .
  • DWH  6RXUFH  'UDLQ     Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Thermal Re.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type N-Channel Enhancement MOSFET   ,,%4 MOSFIECT Features VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V) D G S    627       3 1 2        1.6       8QLW PP     *DWH  6RXUFH  'UDLQ     Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current Power Dissipation TA=25 TA=70 Thermal Resistance.Junction-to-Ambient Thermal Resistance.Junction-to-Case Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD R JA R JC TJ, TSTG Rating 30 12 4 3.4 15 1.4 1 125 80 -55 to 150 Unit V V A W /W /W www.kexin.com.
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