Kexin Electronics 2KK5009
N-Channel Enhancement MOSFET
| Part No. | 2KK5009 |
|---|---|
| Datasheet | 2KK5009 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected 2KV HBM 3 1 2ABSOLUTE MAXIMUM RATINGS
Ta=25 Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage -Continuous VDS 60 V VGS ±20 Drain Current -Continuous ( Note:1) -Pulsed 440 ID mA 1000 Power Dissipation (Note 1) Thermal Resistance.Junction- to-Ambient Junction Temperature PD 530 mW RthJA 232 /W TJ 150 Storage Temperature Range Tstg -55 to 150 Notes: 1. Device mounted on FR-4 PCB using 1 square inch pad size, 1oz copper.ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Symbol Test Conditions Drain-Source Breakdown Voltage (Note.2) Zero Gate Voltage Drain Current (Note.2) VDSS IDSS ID=100 A, VGS=0V VDS=60V, VGS=0V Gate-Body Leakage Current (Note.2) IGSS VDS=0V, VGS=±20V Gate Threshold Voltage (Note.2) Static Drain-Source On-Resistance (Note.2) Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacit...
