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2KK5013 - N-Channel Enhancement MOSFET

Features

  • ƽ VDS (V) = 60V ƽ ID = 3.7A (VGS = 10V) ƽ RDS(ON) ˘ 100m¡ (VGS = 10V) ƽ RDS(ON) ˘ 120m¡ (VGS = 4.5V) D G S    627       3 1 2        1.6       8QLW PP    1. Gate 2. Source 3. Drain     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type MOSFET N-Channel Enhancement MOSFET 2KK5013 Ƶ Features ƽ VDS (V) = 60V ƽ ID = 3.7A (VGS = 10V) ƽ RDS(ON) ˘ 100m¡ (VGS = 10V) ƽ RDS(ON) ˘ 120m¡ (VGS = 4.5V) D G S    627       3 1 2        1.6       8QLW PP    1. Gate 2. Source 3. Drain     Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 60 f   1.4 55 150 -55 to 150 Unit V A W ć/W ć www.kexin.com.
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