Kexin Electronics 2KK5092
N-Channel MOSFET
FEATURES
● VDS = 40 V● ID (at VGS=10V) = 70 A
● RDS(ON) (at VGS = 10 V) < 3.0 mΩ
● RDS(ON) (at VGS = 4.5 V) < 3.8 mΩ
● 100% UIS Tested
● 100% Rg Tested TO-252 D G S MOSFET 23 1 1. Gate (G) 2. Drain (D) 3. Source (S)
●
ABSOLUTE MAXIMUM RATINGS
(TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 40 V VGS ±20 Continuous Drain Current TC = 25℃ 70 ID TC = 100℃ 55 A Pulsed Drain Current (Note 2) IDM 300 Continuous Drain Current TA = 25℃ 23 IDSM TA = 70℃ 18 Avalanche Current (Note 2) IAS 68 A Avalanche Energy L = 0.1mH (Note 2) EAS 231 mJ Thermal Resistance, Junction- to-Ambient (Note 5) Thermal Resistance, Junction- to-Case RθJA 47 RθJC 1 ℃/W Power Dissipation (Note 4) Power Dissipation (Note 5) TC = 25℃ 150 PD TC = 100℃ 75 W TA = 25℃ 2.7 PDSM TA = 70℃ 1.7 Junction Temperature Storage Temperature Range TJ 175 ℃ Tstg -55 to 175 Notes: 1. The maximum current rating is package limited. 2. Single pulse width limited by junction temperature TJ(MAX)=175°C.