Kexin Electronics 2KK5095
N-Channel MOSFET
| Part No. | 2KK5095 |
|---|---|
| Datasheet | 2KK5095 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
VDS (V) = 100V ID = 10.8 A (VGS = 10V) RDS(ON) 130m (VGS = 10V) RDS(ON) 150m (VGS = 4.5V) TO-252 23 1 D G S 1. Gate (G) 2. Drain (D) 3. Source (S)ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Tc=25 Tc=70 Single Pulse Avalanche Energy (Note.1) Power Dissipation Thermal Resistance.Junction- to-Ambient Tc=25 Tc=70 Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM EAS PD RthJA RthJC TJ Tstg Rating 100 ±20 10.8 8.7 25 2.5 35.8 22.9 50 3.5 150 -55 to 150 Unit V A mJ W /W Note.1: EAS is tested at starting Tj=25 , L=0.3mH, IAS=4A, VDD=50V, VGS=10V 1 SMD Type MOSFET N-Channel MOSFETELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Gate Resistance Input Capacitance Output Capacitance...
