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2KK5095 - N-Channel MOSFET

Key Features

  • VDS (V) = 100V ID = 10.8 A (VGS = 10V) RDS(ON) 130m (VGS = 10V) RDS(ON) 150m (VGS = 4.5V) TO-252 23 1 D G S 1. Gate (G) 2. Drain (D) 3. Source (S) Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Tc=25 Tc=70 Single Pulse Avalanche Energy (Note.1) Power Dissipation Thermal Resistance. Junction- to-Ambient Tc=25 Tc=70 Thermal Resistance. Junction- to-Case Junction Temperature Storage Temperature Range S.

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SMD Type N-Channel MOSFET 2KK5095 MOSFET Features VDS (V) = 100V ID = 10.8 A (VGS = 10V) RDS(ON) 130m (VGS = 10V) RDS(ON) 150m (VGS = 4.5V) TO-252 23 1 D G S 1. Gate (G) 2. Drain (D) 3. Source (S) Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Tc=25 Tc=70 Single Pulse Avalanche Energy (Note.1) Power Dissipation Thermal Resistance.Junction- to-Ambient Tc=25 Tc=70 Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM EAS PD RthJA RthJC TJ Tstg Rating 100 ±20 10.8 8.7 25 2.5 35.8 22.9 50 3.5 150 -55 to 150 Unit V A mJ W /W Note.1: EAS is tested at starting Tj=25 , L=0.3mH, IAS=4A, VDD=50V, VGS=10V www.kexin.com.