Datasheet4U Logo Datasheet4U.com

2KK5120DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 40 V.
  • ID = 150 A.
  • RDS(ON) (at VGS = 10 V) < 1.8 mΩ PDFN5x6-8 S D S D S D G D.
  • Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25℃ Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Power Dissipation.
  • Derate above 25℃ Single Pulse Avalanche Energy (Note 2) EAS Single Pulse Avalanche Current (Note 2) IAS Th.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2KK904 N-Channel Silicon Power MOS FET Fuji Semiconductors

Other Datasheets by Kexin Semiconductor

Part Number Description
2KK5122DFN N-Channel MOSFET
2KK5125DFN N-Channel MOSFET
2KK5127 N-Channel MOSFET
2KK5129 N-Channel MOSFET
2KK5100DFN N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFET N-Channel MOSFET 2KK5120DFN ■ Features ● VDS (V) = 40 V ● ID = 150 A ● RDS(ON) (at VGS = 10 V) < 1.8 mΩ PDFN5x6-8 S D S D S D G D ■ Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25℃ Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Power Dissipation – Derate above 25℃ Single Pulse Avalanche Energy (Note 2) EAS Single Pulse Avalanche Current (Note 2) IAS Thermal Resistance, Junction- to-Ambient RθJA Thermal Resistance, Junction- to-Case RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2.