Kexin Electronics 2KK5120DFN
N-Channel MOSFET
| Part No. | 2KK5120DFN |
|---|---|
| Datasheet | 2KK5120DFN Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 40 V● ID = 150 A
● RDS(ON) (at VGS = 10 V) < 1.8 mΩ PDFN5x6-8 S D S D S D G D
●
ABSOLUTE MAXIMUM RATINGS
(TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25℃ Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Power Dissipation – Derate above 25℃ Single Pulse Avalanche Energy (Note 2) EAS Single Pulse Avalanche Current (Note 2) IAS Thermal Resistance, Junction- to-Ambient RθJA Thermal Resistance, Junction- to-Case RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition : Tj=25℃,VDD=25V,VG=10V,L=1mH,,IAS=30A Rating 40 ±20 150 100 560 92.6 0.74 450 30 62 1.35 150 -55 to 150 Unit V A W W/℃ mJ A ℃/W ℃ 1 SMD Type MOSFET N-Channel MOSFET 2KK5120DFN●
ELECTRICAL CHARACTERISTICS
(TC = 25℃ unless othewise specified) Parameter Symbol Test Conditions Off Characteristics Drain-So...
