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2KK5122DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 75 V.
  • ID = 65 A @ VGS=10V.
  • RDS(ON) < 8.25 mΩ @ VGS = 10 V PDFN5x6-8 S D S D S D G D.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25℃ ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation TC = 25℃ PD Single Pulse Avalanche Energy (Note 2) EAS Thermal Resistance. Junction- to-Case (Note 3) RθJC Junction Temperature TJ.

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SMD Type N-Channel MOSFET 2KK5122DFN MOSFET ■ Features ● VDS (V) = 75 V ● ID = 65 A @ VGS=10V ● RDS(ON) < 8.25 mΩ @ VGS = 10 V PDFN5x6-8 S D S D S D G D ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25℃ ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation TC = 25℃ PD Single Pulse Avalanche Energy (Note 2) EAS Thermal Resistance.Junction- to-Case (Note 3) RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition : TJ=25℃,VDD=35V,VG =10V,RG=25Ω 3. Surface Mounted on FR4 Board, t ≤ 10 sec. Rating 75 ±25 65 45 260 78 120 3.