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2SD1622 Datasheet PDF

Kexin Electronics 2SD1622

NPN Epitaxial Planar Silicon Transistor

Part No. 2SD1622
Datasheet 2SD1622 Download
Manufacturer Kexin Electronics
Description NPN Epitaxial Planar Silicon Transistor
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2SD1622 datasheet page 1 preview

FEATURES

Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s.

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 5 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW W 1 Free Datasheet SMD Type 2SD1622

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 50 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 100 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz 100 Min Tran...
2SD1622 page 2 preview