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2SD1622 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • Adoption of FBET process. . Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature.
  • Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC.
  • Tj Tstg Rating 60 50 5 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW W www. kexin. com. cn 1 Free.

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1622 Features Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 5 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.