Adoption of FBET process. . Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature.
Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC.
Tj Tstg Rating 60 50 5 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW W
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SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SD1622
Features
Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 60 50 5 1 2 500 1.3 150 -55 to +150 Unit V V V A A mW W
www.kexin.com.cn
1
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