Kexin Electronics 2SD1664
NPN Transistors
| Part No. | 2SD1664 |
|---|---|
| Datasheet | 2SD1664 Download |
| Manufacturer | Kexin Electronics |
| Description | NPN Transistors |
| Buy | Stock & Price |
FEATURES
Low VCE(sat) Compliments to 2SB1132 1.70 0.1 0.42 0.1 0.46 0.1ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) 1 A IC PW=20ms, duty=1/2 2 A Collector Power Dissipation PC * 0.5 W Jumction temperature Tj 150 Storage temperature Range Tstg -55 to +150 * mounted on a 40x40x0.7mm ceramic board. 1.Base 2.Collector 3.EmitterELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 50 μA， IE= 0 VCEO Ic= 1 mA， IB= 0 VEBO IE= 50μA ICBO VCB= 20 V , IE= 0 IEBO VEB= 4V , IC=0 VCE(sat) IC=500 mA, IB=50mA hFE VCE= 3V, IC= 100mA Cob VCB= 10V, IE= 0,f=1MHz fT VCE= 5V, IC= -50mA,f=10...
