2SK2158 Datasheet | Kexin Semiconductor

Features Capable of drive gate with 1.5 V Because of high input impedance, there is no need to consider driving current. Bias resistance can be omitted, enabling reduction in total number of parts. +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 Unit: mm 0.1+0.05 -0.01 1.B1a Gse ATE 2.2Em Si Otte Ur RCE 3.3co Dlle Rct Aor IN Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature - PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS ID Idp - PD Tch Tstg Rating 50 7.0 0.1 0.2 200 150 -55 to +150 Unit V V A A m W Symbol Testconditons Min Typ Max Unit IDSS VDS=50V,VGS=0 IGSS VGS=...