2SK2158
2SK2158 is N-CHANNEL MOSFET manufactured by Renesas.
FEATURES
- Capable of drive gate with 1.5 V
- Because of high input impedance, there is no need to consider driving current.
- Bias resistance can be omitted, enabling reduction in total number of parts.
2.9 ± 0.2 0.95 0.95
PACKAGE DIMENSIONS (in millimeters)
+0.1
- 0.05
2.8 ± 0.2 1.5
0.65+- 00..115
+0.1
- 0.05
Marking
+0.1
- 0.06
1.1 to 1.4 0.3
0 to 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
EQUIVALENT CIRCUIT
Marking: G23
Gate protection diode
Internal diode
PIN CONNECTION 1. Source (S) 2. Gate (G) 3. Drain (D)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Total Power Dissipation Channel Temperature Storage Temperature
SYMBOL VDSS VGSS ID(DC) ID(pulse)
PT Tch Tstg
VGS = 0 VDS = 0
TEST CONDITIONS
PW ≤ 10 ms, Duty Cycle ≤ 50 %
RATINGS 50 ±7.0 ±0.1...
