Datasheet4U Logo Datasheet4U.com

2SK3480 - MOS Field Effect Transistor

Key Features

  • Super low on-state resistance: RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 25A) RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 25 A) Low Ciss: Ciss = 3600 pF TYP. Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3480 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK3480 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3480-S N-Channel MOSFET Transistor Inchange Semiconductor
2SK3480-Z N-Channel MOSFET Transistor Inchange Semiconductor
2SK3480-Z N-Channel 100V MOSFET VBsemi

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK3404 MOS Field Effect Transistor
2SK3405 MOS Field Effect Transistor
2SK3424 MOS Field Effect Transistor
2SK3424-ZJ N-Channel MOSFET
2SK3430 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFET MOS Field Effect Transistor 2SK3480 Features Super low on-state resistance: RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 25A) RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 25 A) Low Ciss: Ciss = 3600 pF TYP. Built-in gate protection diode +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol Rating Unit VDSS 100 V VGSS 20 V ID 50 A Idp * 100 A 84 PD W 1.