2SK3636
2SK3636 is Silicon N-channel Power MOSFET manufactured by Kexin Semiconductor.
Features
Avalanche energy capacity guaranteed: EAS 20 m J Gate-source surrender voltage VGSS = 30 V guaranteed High-speed switching: tf = 50 ns No secondary breakdown
+ 5 .2 8 0.2 -0.2
+ 8 .7 0.2 -0.2
TO-263
+0.2
4.57 +0.1
-0.2
1.27-0.1
Unit: mm
+ 1 .2 7 0.1 -0.1
+ 0 .2 -0.2
1.27+0.1 -0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1 -0.1
+ 2 .5 4 0.2 -0.2
0.4+0.2 -0.2
.
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability Power dissipation Ta = 25 Power dissipation Channel temperature Storage temperature
Symbol
Rating
Unit
VDSS
VGSS...
