BC807 Overview
Key Features
- Base Voltage Collector
- Emitter Voltage Emitter
- Base Voltage Collector Current
- Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol Rating Unit VCBO
- 0.5 A PC 0.3 W TJ 150 ć Tstg
- 55 to 150 Ƶ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter
- 1.2 100 630 40 100 MHz 1 SMD Type Transistors PNP Transistors BC807 (KC807) Ƶ Typical Characterisitics COLLECTOR CURRENT I (mA) C
- 280 - 240 - 200 Static Characteristic
- 1mA -0.9mA -0.8mA COMMON EMITTER T =25ć a
- 0.5mA -0.4mA
