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KDS2572 - N-Channel UltraFET Trench MOSFET

Key Features

  • RDS(ON) = 0.040 (Typ. ), VGS = 10V Qg(TOT) = 29nC (Typ. ), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25 ).
  • 1 Drain Current Continuous (TC = 100 ).
  • 1 Power dissipation Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Case at 10 seconds.
  • 2 Thermal Resistance Junct.

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SMD Type ICIC N-Channel UltraFET Trench MOSFET KDS2572 Features RDS(ON) = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25 ) *1 Drain Current Continuous (TC = 100 ) *1 Power dissipation Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Case at 10 seconds *2 Thermal Resistance Junction to Case at steady state *2 *1 VGS = 10V, RqJA = 50 /W *2 R JA is measured with 1.0in2 copper on FR-4 board Symbol VDSS VGS ID PD TJ, TSTG R JC R JA R JA Rating 150 20 4.9 3.1 2.5 20 -55 to 150 25 50 85 Unit V V A A W mW/ /W /W /W www.