The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
ICIC
N-Channel UltraFET Trench MOSFET KDS2572
Features
RDS(ON) = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25 ) *1 Drain Current Continuous (TC = 100 ) *1 Power dissipation
Derate above 25 Operating and Storage Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Case at 10 seconds *2 Thermal Resistance Junction to Case at steady state *2 *1 VGS = 10V, RqJA = 50 /W *2 R JA is measured with 1.0in2 copper on FR-4 board
Symbol VDSS VGS
ID
PD
TJ, TSTG R JC R JA R JA
Rating 150 20 4.9 3.1 2.5 20
-55 to 150 25 50 85
Unit V V A A W
mW/
/W /W /W
www.