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KDS4470 - 40V N-Channel PowerTrench MOSFET

Key Features

  • 12.5 A, 40 V. RDS(ON) = 9m @ VGS = 10 V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation Power dissipation Power dissipation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG R R R JA JA JC Symbol VDSS VGS ID Rating 40 +30/-20 12.5 50 2.5 Unit V V A A PD.

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SMD Type 40V N-Channel PowerTrench MOSFET KDS4470 IC IC Features 12.5 A, 40 V. RDS(ON) = 9m @ VGS = 10 V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation Power dissipation Power dissipation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG R R R JA JA JC Symbol VDSS VGS ID Rating 40 +30/-20 12.5 50 2.5 Unit V V A A PD 1.4 1.2 -55 to 175 50 125 25 W Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Ambient (Note 1c) Thermal Resistance Junction to Case (Note 1) /W /W /W www.