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KDS4501H - Complementary PowerTrench Half-Bridge MOSFET

Key Features

  • N-Channel 9.3 A, 30 V RDS(ON) = 18m RDS(ON) = 23m P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1).

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SMD Type Transistors IC Complementary PowerTrench Half-Bridge MOSFET KDS4501H Features N-Channel 9.3 A, 30 V RDS(ON) = 18m RDS(ON) = 23m P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JA JC Symbol VDSS VGS ID N-Channel 30 20 9.3 20 2.5 P- Channel -20 8 -5.6 -20 Unit V V A A PD 1.2 1 -55 to 150 50 25 W /W /W www.DataSheet4U.net www.kexin.com.