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KDS4559 - 60V Complementary PowerTrench MOSFET

Key Features

  • N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m P-Channel -3.5 A, -60 V RDS(ON) = 105 m RDS(ON) = 135 m @ VGS =- 10 V @ VGS =-4.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Ther.

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SMD Type Transistors IC 60V Complementary PowerTrench MOSFET KDS4559 Features N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m P-Channel -3.5 A, -60 V RDS(ON) = 105 m RDS(ON) = 135 m @ VGS =- 10 V @ VGS =-4.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JA JC Symbol VDSS VGS ID PD N-Channel 60 20 4.5 20 2 1.6 P- Channel -60 20 -3.5 -20 Unit V V A A W PD 1.2 1 -55 to 175 78 40 W /W /W www.DataSheet4U.