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KDS5670 - 60V N-Channel MOSFET

Key Features

  • 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) Operating and Storage Temperature Range Therm.

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SMD Type ICIC 60V N-Channel PowerTrenchTM MOSFET KDS5670 Features 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) Symbol VDSS VGS ID PD TJ, TSTG R JA R JC Rating 60 20 10 50 2.5 1.2 1 -55 to 175 50 25 Unit V V A A W /W /W www.kexin.com.