Kexin Electronics KDS5670
60V N-Channel MOSFET
FEATURES
10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capabilityABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) Symbol VDSS VGS ID PD TJ, TSTG R JA R JC Rating 60 20 10 50 2.5 1.2 1 -55 to 175 50 25 Unit V V A A W /W /W 1 SMD Type ICIC KDS5670ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Dra...