KDS5670 Datasheet | Kexin Semiconductor

Features 10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation (Note 1a) Power dissipation (Note 1b) Power dissipation (Note 1c) Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) Symbol VDSS VGS ID TJ, TSTG R JA R JC Rating 60 20 10 50 2.5 1.2 1 -55 to 175 50 25 Unit V V A A /W /W .kexin..cn 1 SMD Type ICIC Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Symbol BVDSS Testconditons VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 IDSS IGSSF IGSSR VGS(th) VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250...