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KDS6375 - P-Channel 2.5V Specified PowerTrench MOSFET

Key Features

  • -8 A, -20 V. RDS(ON) = 24m @ VGS = -4.5 V RDS(ON) = 32m @ VGS =-2.5V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Power Dissipation for Single Operation (Note 1c) Op.

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SMD Type ICIC P-Channel 2.5V Specified PowerTrench MOSFET KDS6375 Features -8 A, -20 V. RDS(ON) = 24m @ VGS = -4.5 V RDS(ON) = 32m @ VGS =-2.