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KDS6685 - 30V P-Channel PowerTrench MOSFET

Key Features

  • -8.8 A, -30 V. RDS(ON) = 20m @ VGS = -10 V RDS(ON) = 35m @ VGS =-4.5V Low gate charge(17 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Power Dissipation for.

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SMD Type 30V P-Channel PowerTrench MOSFET KDS6685 Features -8.8 A, -30 V. RDS(ON) = 20m @ VGS = -10 V RDS(ON) = 35m @ VGS =-4.