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KDS8333C - 60V Complementary PowerTrench MOSFET

Key Features

  • N-Channel 4.1 A, 30 V RDS(ON) = 80m @ VGS = 10 V RDS(ON) = 130m @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m @ VGS =- 10 V RDS(ON) = 200 m @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Po.

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SMD Type TransistIoCrs 60V Complementary PowerTrench MOSFET KDS8333C Features N-Channel 4.1 A, 30 V RDS(ON) = 80m @ VGS = 10 V RDS(ON) = 130m @ VGS =4.5V P-Channel -3.4 A, 30 V RDS(ON) = 130 m @ VGS =- 10 V RDS(ON) = 200 m @ VGS =-4.5V Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package.