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KDS8928A - Dual N & P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • N-Channel 5.5 A, 30 V RDS(ON) = 0.030 @ VGS = 4.5V RDS(ON) = 0.038 @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 @ VGS =- 4.5 V RDS(ON) = 0.070 @ VGS =-2.5V High density cell design for extremely low RDS(ON). High power and handling capability in a widely used surface mount package Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissi.

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SMD Type TransistIoCrs Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS(ON) = 0.030 @ VGS = 4.5V RDS(ON) = 0.038 @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 @ VGS =- 4.5 V RDS(ON) = 0.070 @ VGS =-2.5V High density cell design for extremely low RDS(ON). High power and handling capability in a widely used surface mount package Dual (N & P-Channel) MOSFET in surface mount package.