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KI10N06DY - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • RDS(ON) ＜ 18mΩ (VGS = 10V), ID = 9.2 A.
  • RDS(ON) ＜ 28mΩ (VGS = 4.5V), ID = 7.5 A.
  • Low Input Capacitance.
  • Fast Switching Speed D +0.04 0.21 -0.02 SOP-8 G S TraMnOsiSsFtoErsT 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings (TA = 25℃,unless otherwise specified. ) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (Note 2), VGS = 10V Steady State t.

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SMD Type N-Channel MOSFET KI10N06DY ■ Features ● VDS (V) = 60V ● RDS(ON) ＜ 18mΩ (VGS = 10V), ID = 9.2 A ● RDS(ON) ＜ 28mΩ (VGS = 4.5V), ID = 7.5 A ● Low Input Capacitance ● Fast Switching Speed D +0.04 0.21 -0.02 SOP-8 G S TraMnOsiSsFtoErsT 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings (TA = 25℃,unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (Note 2), VGS = 10V Steady State t<10s TA=25℃ TA=70℃ TA=25℃ TA=70℃ Continuous Drain Current (Note 2), VGS = 4.5V Steady State t<10s TA=25℃ TA=70℃ TA=25℃ TA=70℃ Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 2) Avalanche Current (Note 3) L = 0.