KI10N06DY Datasheet | Kexin Semiconductor

Features - VDS (V) = 60V - RDS(ON) ＜ 18mΩ (VGS = 10V), ID = 9.2 A - RDS(ON) ＜ 28mΩ (VGS = 4.5V), ID = 7.5 A - Low Input Capacitance - Fast Switching Speed +0.04 0.21 -0.02 SOP-8 Tra Mn Osi Ss Fto Ers T 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings (TA = 25℃,unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (Note 2), VGS = 10V Steady State t<10s TA=25℃ TA=70℃ TA=25℃ TA=70℃ Continuous Drain Current (Note 2), VGS = 4.5V Steady State t<10s TA=25℃ TA=70℃ TA=25℃ TA=70℃ Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 2) Avalanche Current (Note 3) L = 0.1m H Avalanche Energy (Note 3) L = 0.1m H Total Power Dissipation (Note 1) Total Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 1) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 2) Steady State t<10s Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Range Symbol VDS...