KI10P40DY Datasheet | Kexin Semiconductor

Features - VDS=-40V - ID =-15A - RDS(on)= 42mΩ@VGS=-10V ,ID=-1A - RDS(on)= 70mΩ@VGS=-4.5V,ID=-1A +0.040.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation TA=25℃ TA=70℃ Junction Temperature Storage Temperature Range Symbol VDS VGS TJ Tstg Rating -40 ±20 -15 -10 -30 1.3 0.8 150 -55 to 150 Unit V W ℃ - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Symbol VDSS IDSS IGSS VGS(th) RDS(On) Test Conditions ID=-250μA, VGS=0V VDS=-32V, VGS=0V,TJ=25℃ VDS=0V, VGS=±20V VDS=VGS , ID=-250μA VGS=-10V, ID=-1A VGS=-10V, ID=-10A VGS=-4.5V, ID=-1A - Marking Marking 10P40...