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KI1304BDL - 30V N-Channel MOSFET

Key Features

  • TrenchFET Power MOSFET 100% Rg Tested Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 ) Tc=25 -- Tc=70 Continuous drain current (TJ = 150 ) Ta=25 -- Ta=70 Pulsed drain current Continuous Source Drain Diode Current Tc=25 Ta=25 Symbol Rating Unit VDS 30 V VGS 12 V ID 0.90 0.71 A ID 0.85.
  • 1,2 0.68.
  • 1,2 A IDM A 0.31 IS A 0.28 Power dissipation -- Tc=25 Tc=70 PD 0.37 0.24 W Power dissi.

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SMD Type N-Channel 30-V (D-S) MOSFET KI1304BDL MOSFEICT Features TrenchFET Power MOSFET 100% Rg Tested Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 ) Tc=25 -- Tc=70 Continuous drain current (TJ = 150 ) Ta=25 -- Ta=70 Pulsed drain current Continuous Source Drain Diode Current Tc=25 Ta=25 Symbol Rating Unit VDS 30 V VGS 12 V ID 0.90 0.71 A ID 0.85*1,2 0.68*1,2 A IDM A 0.31 IS A 0.28 Power dissipation -- Tc=25 Tc=70 PD 0.37 0.24 W Power dissipation -- Ta=25 Ta=70 PD 0.34*1,2 0.22*1,2 W Operating junction and storage temperature range Tj,Tstg -55 to +150 *1 Surface Mounted on 1" X 1" FR4 Board.