KRF7338 Datasheet | Kexin Semiconductor

Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current - 1 Power Dissipation @Ta= 25 - 3 Power Dissipation @Ta= 70 - 3 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient - 3 R JA Junction-to-Drain Lead R JL - 1 Repetitive rating; pulse width limited by max. junction temperature. - 2 Pulse width 400 s; duty cycle 2%. - 3 Surface mounted on 1 in square Cu board. - 4 The N-channel MOSFET can withstand 15V VGS max for up to 24 hours over the life of the device. N-Channel P-Channel -12...