KRF7343 Datasheet | Kexin Semiconductor

Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current - 1 Power Dissipation @Ta= 25 - 5 Power Dissipation @Ta= 70 - 5 Gate-to-Source Voltage Single Pulse Avalanche Energy - 3 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - 2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient - 5 R JA - 1 Repetitive rating; pulse width limited by max. junction temperature. N-Channel...