KRF7401 Datasheet | Kexin Semiconductor

Features Generation V Technology Ultra Low On-Resistance N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 Sec. Pulsed Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TC = 70 Pulsed Drain Current- 1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt- 2 dv/dt Operating Junction and Storage Temperature Range TJ,TSTG Maximum Junction-to-Ambient R JA - 1 Repetitive rating; pulse width limited by max. junction temperature. - 2 ISD 4.1A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150 Rating 10 8.7 7 35 2.5 0.02 12 5 -55 to + 150 50 Unit W W/ V V/ns /W .kexin..cn 1 SMD Type ICIC Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage...