KRF7476PBF Datasheet | Kexin Semiconductor

Features - VDS=15 V - RDS(on)=0.008Ω@VGS=4.5V - RDS(on)= 0.03Ω @VGS= 2.8 V Top View - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Rth JA TJ, Tstg Rating 15 ±12 15 120 2.5 50 -55 to 150 Unit V V A A W °C/W ℃ .kexin..cn 1 SMD Type ICIC SMD Type ICIC - Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Drain- Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage BVDSS VGS = 0 V, ID = - 250 μA VDS = 9.6 V , VGS = 0V IDSS VDS = 9.6V , VGS = 0V , TJ =125℃ VGS(th) VDS = VGS , ID = 250u A Gate-Body Leakage IGSS VDS = 0V , VGS = 12V Drain-Source On-State Resistance - VGS = 4.5 V , ID =15 A r DS(on) VGS =2.8 V , ID =12 A Avalanche Current I AR Forward Transconductance- gfs VDS = 6.0V , ID =11A Total Gate Charge Qg Gate-Source...