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KRF7501 - Power MOSFET

Key Features

  • Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current.
  • 1 Power Dissipation Ta = 25.
  • 1 Power Dissipation Ta = 70.
  • 1 Linear Derating Factor Gate-to-Source Voltage Single Pulse tp 10 s Gate-to-Source Voltage P.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type HEXFET Power MOSFET KRF7501 Features Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 *1 Power Dissipation Ta = 70 *1 Linear Derating Factor Gate-to-Source Voltage Single Pulse tp 10 s Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 1.7A, di/dt 66A/ s, VDD V(BR)DSS,TJ *2 Surface mounted on FR-4 board, t 10sec. Symbol VDS ID ID IDM PD PD VGSM VGS dv/dt TJ, TSTG R JA 150 Rating 20 2.4 1.9 19 1.25 0.