KRF7509 Datasheet | Kexin Semiconductor

Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current - 1 Power Dissipation @Ta= 25 Power Dissipation @Ta= 70 Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10 S VGSM Peak Diode Recovery dv/dt - 2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient - 3 R JA - 1 Repetitive rating; pulse width limited by max. junction temperature. - 2 N-Channel ISD 1.7A, di/dt 120A/ s, VDD V(BR)DSS, TJ 150 P-Channel ISD -1.2A, di/dt 160A/ s, VDD V(BR)DSS, TJ 150 - 3 Surface mounted on FR-4 board, t 10sec. N-Channel P-Channel -30...